This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured. analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel. and verified by Silvaco TCAD (technology computer aided desig... https://www.truvisionhealthftp.com/